Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.usm.my/14830/1/paper6.pdf http://eprints.usm.my/14830/ |
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| Summary: | High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE). |
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