Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method
Zinc sulfide thin films have been prepared through the effective-cost chemical bath deposition (CBD), utilizing various post-deposition treatments (PDT). PDT parameters like ammonia concentration, dipping time, and ultrasonic cleaning (UC) were investigated. The study found that ZnS thin film surfac...
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Elsevier Ltd
2025
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| author | Arsad A.Z. Arzaee N.A. Abdullah S.F. Rahman M.N.A. Noh M.F.M. Bahruddin M.S. Za'abar F.I. Doroody C. Harif M.N. Ibrahim N.B. Zuhdi A.W.M. |
| author2 | 56926685200 |
| author_facet | 56926685200 Arsad A.Z. Arzaee N.A. Abdullah S.F. Rahman M.N.A. Noh M.F.M. Bahruddin M.S. Za'abar F.I. Doroody C. Harif M.N. Ibrahim N.B. Zuhdi A.W.M. |
| author_sort | Arsad A.Z. |
| building | UNITEN Library |
| collection | Institutional Repository |
| content_provider | Universiti Tenaga Nasional |
| content_source | UNITEN Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Zinc sulfide thin films have been prepared through the effective-cost chemical bath deposition (CBD), utilizing various post-deposition treatments (PDT). PDT parameters like ammonia concentration, dipping time, and ultrasonic cleaning (UC) were investigated. The study found that ZnS thin film surface morphologies differ before and after PDT. The untreated film has an impurity phase with distinct morphology, low transmittance, carrier concentrations, and mobility values. PDT films tailored to non-crystalline phases resulted in lower thickness, improved transmittance, and enhanced carrier concentrations and mobility values compared to untreated film. XPS findings demonstrate that various PDT changes in the film composition eliminate sulfate and Zn(OH)2 and increase ZnO bonds. Simultaneous NH4OH and UC lead Zn?O bond peaks to dominate and band gap deterioration compared to untreated ZnS thin film. The ZnS thin films treated with 20% NH4OH without UC exhibited excellent properties, including structure prominent of Zn?S and Zn?O bond peaks, 106 nm thickness growth, 95% average transmittance, 3.70 eV band gap, 3.67 ? 1011 cm?3 carrier concentration, 3.95 ? 102 cm2V?1S?1 mobility, and 4.30 ? 104 �cm resistivity. These values can be ideal for implementing buffer layers on copper indium gallium selenide (CIGS) solar cells. The PDT approach can improve the properties of ZnS thin films, which is crucial to reducing costs in solar cell production. ? 2024 |
| format | Article |
| id | my.uniten.dspace-36660 |
| institution | Universiti Tenaga Nasional |
| publishDate | 2025 |
| publisher | Elsevier Ltd |
| record_format | dspace |
| spelling | my.uniten.dspace-366602025-03-03T15:43:43Z Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method Arsad A.Z. Arzaee N.A. Abdullah S.F. Rahman M.N.A. Noh M.F.M. Bahruddin M.S. Za'abar F.I. Doroody C. Harif M.N. Ibrahim N.B. Zuhdi A.W.M. 56926685200 57204034965 14319069500 57102327000 57200419635 58917193100 56374530600 56905467200 22634024000 7102687930 56589966300 Ammonia Buffer layers Carrier concentration Carrier mobility Chelation Copper compounds Deposition Deterioration Energy gap Film preparation II-VI semiconductors Layered semiconductors Morphology Solar cells Sols Thin films Zinc oxide Zinc sulfide Chemical-bath deposition Concentration values Mobility value Non-crystalline structure Post-deposition treatment condition Postdeposition treatments Property Treatment conditions Zinc sulfide thin films ZnS thin films Optical properties Zinc sulfide thin films have been prepared through the effective-cost chemical bath deposition (CBD), utilizing various post-deposition treatments (PDT). PDT parameters like ammonia concentration, dipping time, and ultrasonic cleaning (UC) were investigated. The study found that ZnS thin film surface morphologies differ before and after PDT. The untreated film has an impurity phase with distinct morphology, low transmittance, carrier concentrations, and mobility values. PDT films tailored to non-crystalline phases resulted in lower thickness, improved transmittance, and enhanced carrier concentrations and mobility values compared to untreated film. XPS findings demonstrate that various PDT changes in the film composition eliminate sulfate and Zn(OH)2 and increase ZnO bonds. Simultaneous NH4OH and UC lead Zn?O bond peaks to dominate and band gap deterioration compared to untreated ZnS thin film. The ZnS thin films treated with 20% NH4OH without UC exhibited excellent properties, including structure prominent of Zn?S and Zn?O bond peaks, 106 nm thickness growth, 95% average transmittance, 3.70 eV band gap, 3.67 ? 1011 cm?3 carrier concentration, 3.95 ? 102 cm2V?1S?1 mobility, and 4.30 ? 104 �cm resistivity. These values can be ideal for implementing buffer layers on copper indium gallium selenide (CIGS) solar cells. The PDT approach can improve the properties of ZnS thin films, which is crucial to reducing costs in solar cell production. ? 2024 Final 2025-03-03T07:43:43Z 2025-03-03T07:43:43Z 2024 Article 10.1016/j.ceramint.2024.02.358 2-s2.0-85186548893 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85186548893&doi=10.1016%2fj.ceramint.2024.02.358&partnerID=40&md5=7a8a9f8f0e54f0d56b31403e805b87b2 https://irepository.uniten.edu.my/handle/123456789/36660 50 11 18697 18707 Elsevier Ltd Scopus |
| spellingShingle | Ammonia Buffer layers Carrier concentration Carrier mobility Chelation Copper compounds Deposition Deterioration Energy gap Film preparation II-VI semiconductors Layered semiconductors Morphology Solar cells Sols Thin films Zinc oxide Zinc sulfide Chemical-bath deposition Concentration values Mobility value Non-crystalline structure Post-deposition treatment condition Postdeposition treatments Property Treatment conditions Zinc sulfide thin films ZnS thin films Optical properties Arsad A.Z. Arzaee N.A. Abdullah S.F. Rahman M.N.A. Noh M.F.M. Bahruddin M.S. Za'abar F.I. Doroody C. Harif M.N. Ibrahim N.B. Zuhdi A.W.M. Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method |
| title | Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method |
| title_full | Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method |
| title_fullStr | Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method |
| title_full_unstemmed | Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method |
| title_short | Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method |
| title_sort | effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method |
| topic | Ammonia Buffer layers Carrier concentration Carrier mobility Chelation Copper compounds Deposition Deterioration Energy gap Film preparation II-VI semiconductors Layered semiconductors Morphology Solar cells Sols Thin films Zinc oxide Zinc sulfide Chemical-bath deposition Concentration values Mobility value Non-crystalline structure Post-deposition treatment condition Postdeposition treatments Property Treatment conditions Zinc sulfide thin films ZnS thin films Optical properties |
| url_provider | http://dspace.uniten.edu.my/ |