APA (7th ed.) Citation

K.E, K., F, S., A.S.M, Z., N.A, J., F, A., S.A.M, J., . . . 56472706900. (2025). Impact of high-k insulators on electrical properties of junctionless double gate strained transistor. Institute of Advanced Engineering and Science.

Chicago Style (17th ed.) Citation

K.E, Kaharudin, Salehuddin F, Zain A.S.M, Jalaludin N.A, Arith F, Junos S.A.M, Ahmad I, and 56472706900. Impact of High-k Insulators on Electrical Properties of Junctionless Double Gate Strained Transistor. Institute of Advanced Engineering and Science, 2025.

MLA (9th ed.) Citation

K.E, Kaharudin, et al. Impact of High-k Insulators on Electrical Properties of Junctionless Double Gate Strained Transistor. Institute of Advanced Engineering and Science, 2025.

Warning: These citations may not always be 100% accurate.