APA (7th ed.) Citation

F, S., I, A., F.A, H., A, Z., H.A, E., B.Y, M., . . . 36239165300. (2023). Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method.

Chicago Style (17th ed.) Citation

F, Salehuddin, Ahmad I, Hamid F.A, Zaharim A, Elgomati H.A, Majlis B.Y, Apte P.R, and 36239165300. Optimization of HALO Structure Effects in 45nm P-type MOSFETs Device Using Taguchi Method. 2023.

MLA (9th ed.) Citation

F, Salehuddin, et al. Optimization of HALO Structure Effects in 45nm P-type MOSFETs Device Using Taguchi Method. 2023.