RF substrate noise characterization for CMOS 0.18?m

In the submicron technologies, RF noise isolation is becoming increasingly important. In this paper, the investigations of the on-chip RF isolation techniques were carried out. The chosen isolation structures were the Deep Nwell (or triple well isolation) and the P+ Guard Ring. The test structures w...

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Bibliographic Details

Main Authors:	Ishak I.S., Keating R.A., Chakrabarty C.K.
Other Authors:	9942783300
Format:	Conference paper
Published:	2023
Subjects:	Deep N-well (DNW) Guard ring (GR) Radio Frequency (RF) Substrate noise suppression Design Microwave isolators Radio systems Signal processing Coupling effects RF isolation techniques Submicron technologies CMOS integrated circuits
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