Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of...

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Bibliographic Details
Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Elgomati H.A., Majlis B.Y.
Other Authors: 36239165300
Format: Conference Paper
Published: 2023
Subjects:
Experiments
Metallic compounds
MOS devices
Semiconductor devices
Signal to noise ratio
Taguchi methods
Threshold voltage
Vanadium
Control factors
Device simulators
Halo implants
Implant energy
Metal oxide semiconductor device
MOS-FET
N-channel
NMOS devices
Noise factor
Orthogonal array
Performance characteristics
Process parameter variations
Process parameters
Process simulators
Response characteristic
Signal to noise
Simulators
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