A.F, R., F, S., A.S.M, Z., K.E, K., I, A., & 57203514087. (2023). Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material. Institute of Advanced Engineering and Science.
Chicago Style (17th ed.) CitationA.F, Roslan, Salehuddin F, Zain A.S.M, Kaharudin K.E, Ahmad I, and 57203514087. Enhanced Performance of 19 Single Gate MOSFET with High Permittivity Dielectric Material. Institute of Advanced Engineering and Science, 2023.
MLA (9th ed.) CitationA.F, Roslan, et al. Enhanced Performance of 19 Single Gate MOSFET with High Permittivity Dielectric Material. Institute of Advanced Engineering and Science, 2023.
Warning: These citations may not always be 100% accurate.