A.H, A. M., E.N, F., F, S., A.S, M. Z., I, A., Z.A, N. F., . . . 36570222300. (2023). Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method. Institute of Physics Publishing.
Chicago Style (17th ed.) CitationA.H, Afifah Maheran, et al. Minimum Leakage Current Optimization on 22 Nm SOI NMOS Device with HfO2/WSix/Graphene Gate Structure Using Taguchi Method. Institute of Physics Publishing, 2023.
MLA (9th ed.) CitationA.H, Afifah Maheran, et al. Minimum Leakage Current Optimization on 22 Nm SOI NMOS Device with HfO2/WSix/Graphene Gate Structure Using Taguchi Method. Institute of Physics Publishing, 2023.
Warning: These citations may not always be 100% accurate.