Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET

Band structure; Capacitance; Drain current; Electric field effects; Metals; MOS devices; Oxide semiconductors; Transconductance; Comparative analysis; Comprehensive analysis; Double gate MOSFET; Dynamic power dissipation; Intrinsic gate capacitance; Intrinsic gate delay; Strained channels; Transcond...

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Bibliographic Details

Main Authors:	Kaharudin K.E., Salehuddin F., Zain A.S.M., Roslan A.F., Ahmad I.
Other Authors:	56472706900
Format:	Conference Paper
Published:	Institute of Physics Publishing 2023
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