A.F, R., K.E, K., F, S., A.S.M, Z., I, A., Z.A.N, F., . . . 57203514087. (2023). Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method. Institute of Physics Publishing.
Chicago Style (17th ed.) CitationA.F, Roslan, et al. Optimization of 10nm Bi-GFET Device for Higher ION/IOFF Ratio Using Taguchi Method. Institute of Physics Publishing, 2023.
MLA (9th ed.) CitationA.F, Roslan, et al. Optimization of 10nm Bi-GFET Device for Higher ION/IOFF Ratio Using Taguchi Method. Institute of Physics Publishing, 2023.
Warning: These citations may not always be 100% accurate.