Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device

In the fabrication of MOSFET devices, the process parameters play a very important role in deciding the MOSFET device's characteristics. The process parameter variations may contribute a significant impact on the dopant profiles that directly affect the device characteristics. These variations...

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Bibliographic Details

Main Authors:	Kaharudin K.E., Hamidon A.H., Salehuddin F., Ifwat Abd Aziz M.N., Ahmad I.
Other Authors:	56472706900
Format:	Article
Published:	Asian Research Publishing Network 2023
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