K.E, K., F, S., A.S.M, Z., M.N.I.A, A., I, A., & 56472706900. (2023). Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS. Asian Research Publishing Network.
Chicago Style (17th ed.) CitationK.E, Kaharudin, Salehuddin F, Zain A.S.M, Aziz M.N.I.A, Ahmad I, and 56472706900. Application of Taguchi Method with the Interaction Test for Lower DIBL IN WSix/TiO2 Channel Vertical Double Gate NMOS. Asian Research Publishing Network, 2023.
MLA (9th ed.) CitationK.E, Kaharudin, et al. Application of Taguchi Method with the Interaction Test for Lower DIBL IN WSix/TiO2 Channel Vertical Double Gate NMOS. Asian Research Publishing Network, 2023.
Warning: These citations may not always be 100% accurate.
