Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET

Ballistics; Display devices; Gate dielectrics; Graphene; Graphene devices; Graphene transistors; Hafnium oxides; High-k dielectric; Manufacture; Ohmic contacts; Reconfigurable hardware; Analytical expressions; Ballistic transports; Channel potential; Drain-induced barrier lowering; HIGH-K metal gate...

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Bibliographic Details

Main Authors:	Noor Faizah Z.A., Ahmad I., Ker P.J., Menon P.S.
Other Authors:	56395444600
Format:	Conference Paper
Published:	EDP Sciences 2023
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