APA (7th ed.) Citation

K.E, K., F, S., A.H, H., M.N.I.A, A., I, A., & 56472706900. (2023). Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio. Penerbit UTM Press.

Chicago Style (17th ed.) Citation

K.E, Kaharudin, Salehuddin F, Hamidon A.H, Aziz M.N.I.A, Ahmad I, and 56472706900. Taguchi Modeling of Process Parameters in Vdg-mosfet Device for Higher ION/IOFF Ratio. Penerbit UTM Press, 2023.

MLA (9th ed.) Citation

K.E, Kaharudin, et al. Taguchi Modeling of Process Parameters in Vdg-mosfet Device for Higher ION/IOFF Ratio. Penerbit UTM Press, 2023.