A.H.A, M., P.S, M., S, S., I, A., Z.A.N, F., & 36570222300. (2023). Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method. Institute of Electrical and Electronics Engineers Inc.
Chicago Style (17th ed.) CitationA.H.A, Maheran, Menon P.S, Shaari S, Ahmad I, Faizah Z.A.N, and 36570222300. Statistical Optimization of Process Parameters for Threshold Voltage in 22 Nm P-Type MOSFET Using Taguchi Method. Institute of Electrical and Electronics Engineers Inc, 2023.
MLA (9th ed.) CitationA.H.A, Maheran, et al. Statistical Optimization of Process Parameters for Threshold Voltage in 22 Nm P-Type MOSFET Using Taguchi Method. Institute of Electrical and Electronics Engineers Inc, 2023.
