APA (7th ed.) Citation

A.H, A. M., P.S, M., I, A., S, S., & 36570222300. (2023). Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method. Penerbit UTM Press.

Chicago Style (17th ed.) Citation

A.H, Afifah Maheran, Menon P.S, Ahmad I, Shaari S, and 36570222300. Optimisation of Process Parameters for Lower Leakage Current in 22 Nm N-type MOSFET Device Using Taguchi Method. Penerbit UTM Press, 2023.

MLA (9th ed.) Citation

A.H, Afifah Maheran, et al. Optimisation of Process Parameters for Lower Leakage Current in 22 Nm N-type MOSFET Device Using Taguchi Method. Penerbit UTM Press, 2023.