APA (7th ed.) Citation

A.H.A, M., Z.A, N. F., P.S, M., I, A., P.R, A., T, K., . . . 36570222300. (2023). Statistical process modelling for 32nm high-K/metal gate PMOS device. Institute of Electrical and Electronics Engineers Inc.

Chicago Style (17th ed.) Citation

A.H.A, Maheran, Noor Faizah Z.A, Menon P.S, Ahmad I, Apte P.R, Kalaivani T, Salehuddin F, and 36570222300. Statistical Process Modelling for 32nm High-K/metal Gate PMOS Device. Institute of Electrical and Electronics Engineers Inc, 2023.

MLA (9th ed.) Citation

A.H.A, Maheran, et al. Statistical Process Modelling for 32nm High-K/metal Gate PMOS Device. Institute of Electrical and Electronics Engineers Inc, 2023.