N.B, A., I.B, A., B.B.Y, M., & 26422792900. (2023). Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device. Institute of Electrical and Electronics Engineers Inc.
Chicago Style (17th ed.) CitationN.B, Atan, Ahmad I.B, Majlis B.B.Y, and 26422792900. Effects of High-K Dielectrics with Metal Gate for Electrical Characteristics of 18nm NMOS Device. Institute of Electrical and Electronics Engineers Inc, 2023.
MLA (9th ed.) CitationN.B, Atan, et al. Effects of High-K Dielectrics with Metal Gate for Electrical Characteristics of 18nm NMOS Device. Institute of Electrical and Electronics Engineers Inc, 2023.
Warning: These citations may not always be 100% accurate.