Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen
Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characteriz...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
2018
|
| Subjects: | |
| Online Access: | http://studentsrepo.um.edu.my/9656/1/Soh_Wee_Chen.jpg http://studentsrepo.um.edu.my/9656/8/Master_Dissertation_(SOH_WEE_CHEN).pdf http://studentsrepo.um.edu.my/9656/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1831435392166920192 |
|---|---|
| author | Soh, Wee Chen |
| author_facet | Soh, Wee Chen |
| author_sort | Soh, Wee Chen |
| building | UM Library |
| collection | Institutional Repository |
| content_provider | Universiti Malaya |
| content_source | UM Student Repository |
| continent | Asia |
| country | Malaysia |
| description | Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characterized and investigated using X-ray diffraction (XRD) and Fourier transform infrared (FTIR). The XRD patterns showed the crystallinities that belongs to the germanium dioxide (GeO2), gamma-germanium nitride (γ-Ge3N4) and digermanium dinitrogen oxide (Ge2N2O). Digermanium dinitrogen oxide was formed at 600 °C and its peaks were detected at 31.58° and 65.92° corresponding to planes (110) and (220) respectively in XRD pattern. Meanwhile, peaks indicating the presence of germanium oxide and gamma-germanium nitride were found in XRD pattern for all the samples. GeO2 were detected in XRD patterns at 28.9°, 35.5°, 42.6° and 47.0° corresponding to (110), (111), (200) and (210). γ–Ge3N4 were also found in the XRD patterns at 38.83°, 47.97° corresponding to planes (110), (111). FTIR detected the Ge2N2O absorption peak at 800 cm-1 at 600 °C sample, thus confirming the formation of Ge2N2O on the germanium substrate at 600 °C. |
| format | Thesis |
| id | my.um.stud-9656 |
| institution | Universiti Malaya |
| publishDate | 2018 |
| record_format | eprints |
| spelling | my.um.stud-96562021-06-30T19:44:34Z Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen Soh, Wee Chen T Technology (General) Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characterized and investigated using X-ray diffraction (XRD) and Fourier transform infrared (FTIR). The XRD patterns showed the crystallinities that belongs to the germanium dioxide (GeO2), gamma-germanium nitride (γ-Ge3N4) and digermanium dinitrogen oxide (Ge2N2O). Digermanium dinitrogen oxide was formed at 600 °C and its peaks were detected at 31.58° and 65.92° corresponding to planes (110) and (220) respectively in XRD pattern. Meanwhile, peaks indicating the presence of germanium oxide and gamma-germanium nitride were found in XRD pattern for all the samples. GeO2 were detected in XRD patterns at 28.9°, 35.5°, 42.6° and 47.0° corresponding to (110), (111), (200) and (210). γ–Ge3N4 were also found in the XRD patterns at 38.83°, 47.97° corresponding to planes (110), (111). FTIR detected the Ge2N2O absorption peak at 800 cm-1 at 600 °C sample, thus confirming the formation of Ge2N2O on the germanium substrate at 600 °C. 2018-07 Thesis NonPeerReviewed application/pdf http://studentsrepo.um.edu.my/9656/1/Soh_Wee_Chen.jpg application/pdf http://studentsrepo.um.edu.my/9656/8/Master_Dissertation_(SOH_WEE_CHEN).pdf Soh, Wee Chen (2018) Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen. Masters thesis, University Of Malaya. http://studentsrepo.um.edu.my/9656/ |
| spellingShingle | T Technology (General) Soh, Wee Chen Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_full | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_fullStr | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_full_unstemmed | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_short | Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen |
| title_sort | formation of germanium oxynitride as buffer layer on germanium substrate / soh wee chen |
| topic | T Technology (General) |
| url | http://studentsrepo.um.edu.my/9656/1/Soh_Wee_Chen.jpg http://studentsrepo.um.edu.my/9656/8/Master_Dissertation_(SOH_WEE_CHEN).pdf http://studentsrepo.um.edu.my/9656/ |
| url_provider | http://studentsrepo.um.edu.my/ |