Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy growth of GaN-on-GaN gives an unprecedented high performance with low defect density, high-quality crystal, simplified LED arch...
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| Format: | Thesis |
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2018
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| Online Access: | http://studentsrepo.um.edu.my/9526/1/Sivanathan.pdf http://studentsrepo.um.edu.my/9526/9/sivanathan.pdf http://studentsrepo.um.edu.my/9526/ |
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| _version_ | 1831435363843833856 |
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| author | Sivanathan , Pariasamy @ Chelladurai |
| author_facet | Sivanathan , Pariasamy @ Chelladurai |
| author_sort | Sivanathan , Pariasamy @ Chelladurai |
| building | UM Library |
| collection | Institutional Repository |
| content_provider | Universiti Malaya |
| content_source | UM Student Repository |
| continent | Asia |
| country | Malaysia |
| description | The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for
blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy
growth of GaN-on-GaN gives an unprecedented high performance with low defect
density, high-quality crystal, simplified LED architectures (short process flow) and overall
lower cost. The optimizations of InGaN/GaN MQWs on n-type GaN substrate for blue
emission at 445-455 nm range were carried out. The high quality 6 pairs of multi-quantum
wells with InGaN quantum wells and GaN quantum barriers were grown at different
temperatures (650�to 780�). The lowest defect density demonstrated at 1.3�107 cm |
| format | Thesis |
| id | my.um.stud-9526 |
| institution | Universiti Malaya |
| publishDate | 2018 |
| record_format | eprints |
| spelling | my.um.stud-95262021-06-30T19:38:55Z Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai Sivanathan , Pariasamy @ Chelladurai Q Science (General) The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy growth of GaN-on-GaN gives an unprecedented high performance with low defect density, high-quality crystal, simplified LED architectures (short process flow) and overall lower cost. The optimizations of InGaN/GaN MQWs on n-type GaN substrate for blue emission at 445-455 nm range were carried out. The high quality 6 pairs of multi-quantum wells with InGaN quantum wells and GaN quantum barriers were grown at different temperatures (650�to 780�). The lowest defect density demonstrated at 1.3�107 cm 2018-08 Thesis NonPeerReviewed application/pdf http://studentsrepo.um.edu.my/9526/1/Sivanathan.pdf application/pdf http://studentsrepo.um.edu.my/9526/9/sivanathan.pdf Sivanathan , Pariasamy @ Chelladurai (2018) Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai. Masters thesis, University of Malaya. http://studentsrepo.um.edu.my/9526/ |
| spellingShingle | Q Science (General) Sivanathan , Pariasamy @ Chelladurai Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai |
| title | Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai |
| title_full | Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai |
| title_fullStr | Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai |
| title_full_unstemmed | Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai |
| title_short | Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai |
| title_sort | growth of gan-based led on c-plane gan substrate / sivanathan pariasamy @ chelladurai |
| topic | Q Science (General) |
| url | http://studentsrepo.um.edu.my/9526/1/Sivanathan.pdf http://studentsrepo.um.edu.my/9526/9/sivanathan.pdf http://studentsrepo.um.edu.my/9526/ |
| url_provider | http://studentsrepo.um.edu.my/ |