Analog and short channel effects performance of sub-100 nm graded channel fully depleted silicon on insulator (SOI)

This paper presents the dependency of analog and short channel effects (SCEs) performance of 75 nm channel length fully-depleted Silicon On Insulator (SOI) device on the applied Graded Channel (GC) design. The comparative analysis between standard SOI (STD SOI) devices at doped channel and equivalen...

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Bibliographic Details

Main Authors:	Jafar, N., Soin, N.
Format:	Conference or Workshop Item
Language:	en
Published:	2009
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.um.edu.my/9912/1/analog_and_short_channel.pdf http://eprints.um.edu.my/9912/
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