Synthesis of β-Silicon carbide nanowires by a simple, catalyst-free carbo-thermal evaporation technique

β-SiC nanowires were successfully fabricated on pare Si (100) substrate using simple carbo-thermal evaporation of graphite at 1200°C. The obtained β-SiC nanowires were aligned with diameters ranged between 40 to 500 nm. The majority of crystal planes were β-SiC (111) with other less intensity of (2...

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Bibliographic Details

Main Authors:	Al-Ruqeishi, M.S., Nor, R.M., Amin, Y.M., Al-Azri, K.
Format:	Article
Published:	2012
Subjects:	QC Physics
Online Access:	http://eprints.um.edu.my/7890/
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