Control growth of silicon nanocolumns' epitaxy on silicon nanowires

The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius ~21 ± 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The grow...

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Bibliographic Details

Main Authors:	Chong, S.K., Dee, C.F., Yahya, N., Rahman, Saadah Abdul
Format:	Article
Published:	Springer Verlag 2013
Subjects:	QC Physics
Online Access:	http://eprints.um.edu.my/7328/ https://doi.org/10.1007/s11051-013-1571-z
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