The effect of gate geometric effect and polysilicon doping on the performance of scaled NMOS / Muhammad Luqman Nurhakim Kamarudin ... [et al.]

Insufficiently high doping in polysilicon gates of metal oxide semiconductor field effect transistor (MOSFET) becomes unavoidable due to the demands for low-energy ion implantation and limited annealing conditions to achieve ultra-shallow source and drain junctions. This results in the poly-depletio...

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Bibliographic Details

Main Authors:	Kamarudin, Muhammad Luqman Nurhakim, Abd Rahim, Alhan Farhanah, Mohd Razali, Nurul Syuhadah, Radzali, Rosfariza, Mahmood, Ainorkhilah, Hamzah, Irni Hamiza, Idris, Mohaiyedin, Mohamed, Mohamed Fauzi Packeer
Format:	Article
Language:	en
Published:	Universiti Teknologi MARA Cawangan Pulau Pinang 2023
Subjects:	LG Individual institutions Malaysia Pulau Pinang Universiti Teknologi MARA Asia TK Electrical engineering. Electronics. Nuclear engineering Electronics Apparatus and materials Semiconductors Applications of electronics
Online Access:	https://ir.uitm.edu.my/id/eprint/76051/1/76051.pdf https://ir.uitm.edu.my/id/eprint/76051/ https://uppp.uitm.edu.my/
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