Novel synthesis of Al2-xHfxO3 materials and the fabrication of gate dielectric thin films for metal oxide semiconductor applications / Annie Maria Mahat
Developments of new materials for MOS applications are important due to the problems of downscaling of SiCh. In this work, Hf doped AI2O3 materials were studied as a possible new material for use in metal oxide semiconductor (MOS) application. Novel Ai2-xHfx03 (x = 0.001, 0.002 and 0.003) materials...
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| Format: | Thesis |
| Language: | en |
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2019
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| Online Access: | https://ir.uitm.edu.my/id/eprint/40060/1/40060.pdf https://ir.uitm.edu.my/id/eprint/40060/ |
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