Search Results - Zaharim A.

The versatility of logit over probit regression analyses estimating the strength of gear teeth by Shariff, A.A., Zaharim, A.

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Approximation of error concentration parameter for simultaneous circular functional model by Hussin, A.G., Hassan, S.F., Zubairi, Y.Z., Zaharim, A., Sopian, K.

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Improvement on the innovational outlier detection procedure in a bilinear model by Mohamed .I.B, Ismail .M.I, Yahya .M.S, Hussin .A.G, Mohamed .N, Zaharim .A, Zainol .M.S

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Location determination using radio frequency RSSI and deterministic algorithm by Hussin, A.G., Hassan, S.F., Zubairi, Y.Z., Zaharim, A., Sopian, K.

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Professional Skills Requirement of Mechanical Engineers by Wan Omar Ali Saifuddin, Wan Ismail, Ireana Yusra, Abdul Fatah, Hamzah, N, Zaharim, A

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Performance Evaluation of Routing Protocols for Mobile Ad Hoc Networks Using Statistical Taguchi's Experimental Design by Lee, MH, Sarahintu, M, Mohamed, H, Sanugi, B, Olariu, S, Zaharim, A

Employability skills framework for engineering graduate in Malaysia by Zaharim A., Yusoff Y.M.D., Omar M.Z., Basri H.

Application of Taguchi method in the optimization of process variation for 32nm CMOS technology by Elgomati H.A., Majlis B.Y., Ahmad I., Salehuddin F., Hamid F.A., Zaharim A., Apte P.R.

Employability skills performance score for fresh engineering graduates in Malaysian industry by Md Yusoff Y., Omar M.Z., Zaharim A., Mohamed A., Muhamad N.

Optimization of PV-Wind-Hydro-Diesel hybrid system by minimizing excess capacity by Ab. Razak J., Sopian K., Ali Y., Alghoul M.A., Zaharim A., Ahmad I.

Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device by Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Hashim U., Apte P.R.

Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device by Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.

Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage by Elgomati H.A., Majlis B.Y., Ahmad I., Salehuddin F., Hamid F.A., Zaharim A., Mohamad T.Z., Apte P.R.

Effect of process parameter variations on threshold voltage in 45nm NMOS device by Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.

Optimization of process parameter variability in 45 nm PMOS device using Taguchi method by Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.

Enhancing employability skills through industrial training programme by Yusoff Y.M., Omar M.Z., Zaharim A., Mohamed A., Muhamad N., Mustapha R.

Students' performance on engineering mathematics: Applying rasch measurement model by Aziz A.A., Zaharim A., Fuaad N.F.A., Nopiah Z.M.

Impact of different dose and angle in HALO structure for 45nm NMOS device by Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.

Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET by Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Elgomati H.A., Majlis B.Y.

Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device by Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.