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    Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

    Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs by Bablu K. Ghosh, ToruTanikawa, Akihiro Hashimoto, Akio Yamamoto, Yoshifumi Ito

    Published 2003
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