Search Results - Susthitha P.M.

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    Modelling of process parameters for 32nm PMOS transistor using Taguchi method

    Modelling of process parameters for 32nm PMOS transistor using Taguchi method by Elgomati H.A., Majlis B.Y., Hamid A.M.A., Susthitha P.M., Ahmad I.

    Published 2023
    Conference paper
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