Search Results - Mohamad, N.R.

Statistical optimization influence on high permittivity gate spacer in 16nm DG-FinFET device / Ameer F. Rosla … [et al.] by Rosla, Ameer F., Salehuddin, F., Zain, A.S.M., Kaharudin, K.E., Mohamad, N.R., A.H, Afifah Maheran, Haroon, H., Razak, H.A., Idris, S.K., Ahmad, I.

Get full text
Get full text
Get full text

Statistical Optimization Influence on High Permittivity Gate Spacer in 16nm DG-FinFET Device by Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Mohamad N.R., Maheran A.H.A., Haroon H., Razak H.A., Idris S.K., Ahmad I.

Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method by Roslan A.F., Kaharudin K.E., Salehuddin F., Zain A.S.M., Ahmad I., Faizah Z.A.N., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Mohamad N.R., Hamid A.M.A.

Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods by Roslan A.F., Salehuddin F., M Zain A.S., Mansor N., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Zarina B.Z., Mohamad N.R., A Hamid A.M.

Kretschmann based surface plasmon resonance for sensing in visible region by Menon P.S., Gan S.M., Mohamad N.R., Jamil N.A., Tarumaraja K.A., Razak N.R., Bakar A.A.A., Mukhtar W.M., Murat N.F., Mohamed R., Khairulazdan N.B., Said F.A.