Search Results - Majlis B.B.Y.
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1
Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device by Atan N.B., Ahmad I.B., Majlis B.B.Y.
Published 2023Conference Paper -
2
Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device by Atan N.B., Ahmad I.B., Majlis B.B.Y., Fauzi I.B.A.
Published 2023Conference Paper -
3
Influence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOS by Atan N.B., Majlis B.B.Y., Ahmad I.B., Chong K.H.
Published 2023Article
