Search Results - Hamidon A.H.

Wideband 5.8 GHz Radio Frequency Amplifier with 3 dB Π- Network Attenuator Isolation by Othman , A. R, Hamidon , A. H, Husain , M.N, Johal , M.S, Ibrahim , A.B

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Low Noise Figure of Cascaded LNA at 5.8GHz Using T-Matching Network for WiMAX Applications by Othman , A.R, Ibrahim, A.B, Husain, M.N, Hamidon A.H, A.H, Hamidon , Jsam

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Modeling of Indoor Wave Propagation Models from 1 G Hz to 10 G Hz by Othman , A. R, Hamidon, A. H, Wasli , C, Mustaffa , M. F, Ting, J. T. H

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High Gain Cascaded Low Noise Amplifier using T-Matching Network by Othman , A. R, Hamidon , A. H, Abdul Wasli. , C, Ting , J. T. H, Mustaffa , M. F, Ibrahim , A.B

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High Gain Cascaded Low Noise Amplifier Using T Matching Network by Othman, A. R, Hamidon, A. H, Abdul Wasli. , C, Ting, J. T. H, Mustaffa, M. F

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5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator by Othman , A. R, Hamidon , A. H, Abdul Wasli., C, Ting, J. T. H, Mustaffa , M. F

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Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio by Kaharudin K.E., Salehuddin F., Hamidon A.H., Aziz M.N.I.A., Ahmad I.

Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device by Kaharudin K.E., Salehuddin F., Hamidon A.H., Zain A., Abd Aziz M.N.I., Ahmad I.

Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device by Kaharudin K.E., Hamidon A.H., Salehuddin F., Ifwat Abd Aziz M.N., Ahmad I.