Search Results - Firhat E.N.

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    Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.

    Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method. by Afifah Maheran A.H., Firhat E.N., Salehuddin F., Mohd Zain A.S., Ahmad I., Noor Faizah Z.A., Menon P.S., Elgomati H.A., Roslan A.F.

    Published 2023
    Conference Paper
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