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    A 0.4 V, 12.2 pW leakage, 36.5 fJ/step switching efficiency data retention flip-flop in 22 nm FDSOI

    A 0.4 V, 12.2 pW leakage, 36.5 fJ/step switching efficiency data retention flip-flop in 22 nm FDSOI by Ji, Yuxin, Zhang, Yuhang, Chen, Changyan, Zhao, Jian, Rokhani, Fakhrul Zaman, Ismail, Yehea, Li, Yongfu

    Published 2024
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