Search Results - 57191706660

Modelling of 14NM gate length La2O3-based n-type MOSFET by Mah S.K., Ahmad I., Ker P.J., Noor Faizah Z.A.

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High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control by Mah S.K., Ahmad I., Ker P.J., Noor Faizah Z.A.

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Statistical modelling of 14nm n-types MOSFET by Noor Faizah Z.A., Ahmad I., Ker P.J., Siti Munirah Y., Mohd Firdaus R., Mah S.K., Menon P.S.

Optimization of process parameters for threshold voltage and leakage current based on taguchi method by Noor Faizah Z.A., Ahmad I., Ker P.J., Menon P.S., Afifah Maheran A.H., Mah S.K.

Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling by Noor Faizah Z.A., Ahmad I., Ker P.J., Siti Munirah Y., Mohd Firdaus R., Mah S.K., Menon P.S.

Modeling, simulation and optimization of 14nm high-K/metal gate NMOS with taguchi method by Mah S.K., Ahmad I., Ker P.J., Tan K.P., Faizah Z.A.N.

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A feasible alternative to fdsoi and finfet: Optimization of w/la2o3/si planar pmos with 14 nm gate-length by Mah S.K., Ker P.J., Ahmad I., Zainul Abidin N.F., Ali Gamel M.M.

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