Magnetoelectric, and dielectric based switching properties of co-doped BiFeO3 for low energy memory technology: a first-principles study

• Main Authors: Muhammad Tariq, Muhammad Tariq, Shaari, Amiruddin, Chaudhary, Kashif, Ahmed, Rashid, Jalil, Muhammad Arif, Ismail, Fairuz Dyana
• Format: Article
• Published: Elsevier B.V. 2023
• Subjects: QC Physics
• Online Access: http://eprints.utm.my/106242/; http://dx.doi.org/10.1016/j.physb.2022.414489

First-principles calculations are carried out to grow half-metallicity, tune dielectric and magnetoelectric properties of pure and doped bismuth ferrite BiFeO3 (BFO) with lanthanum (La) at A-site and cobalt (Co) at B-site as mono- and co-dopants. These calculations are performed in the Cambridge Serial Total Energy Package (CASTEP) code using ultra-soft pseudopotential (USP). A large band gap has been observed in the pure rhombohedral phase. The Co impurity atom is more favorable to decrease the band gap while La pushes the BFO towards half-metallic behavior, which develops 100% polarization in all doped BFO systems. From the dielectric response of BFO, high spin current density <s> of 8.7 × 103 A/m2 and charge current density (j) of 6.3 × 10–11 A/m2 have been observed in the La doped system. In the case of magnetic properties, the strong magnetization (M) 32.13 MA/cm2 and the large magnetoelectric coupling coefficient of 6.72× 10−6 s/m have been observed in co-doped BFO.