Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device

• Main Authors: Kaharudin, K.E., Hamidon, A.H., Salehuddin, F., Ifwat Abd Aziz, M.N., Ahmad, I.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5191

In the fabrication of MOSFET devices, the process parameters play a very important role in deciding the MOSFET device's characteristics. The process parameter variations may contribute a significant impact on the dopant profiles that directly affect the device characteristics. These variations...